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| Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 7.30.1 1.80.1 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 q q High collector to base voltage VCBO High collector to emitter VCEO 0.750.1 2.30.1 4.60.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 500 500 7 2.0 1.0 10 150 -55 to +150 Unit V V V A A 2.3 1 2 3 1:Base 2:Collector 3:Emitter U Type Package Unit: mm 6.50.2 5.35 4.35 1.8 0.75 2.3 W C C 1 2 3 0.6 0.50.1 2.30.1 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) Conditions VCB = 400V, IE = 0 VEB = 5V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 330mA IC = 330mA, IB = 33mA IC = 330mA, IB = 33mA 500 500 7 100 100 min typ 1:Base 2:Collector 3:Emitter EIAJ:SC-63 U Type Package (Z) max 100 10 6.0 5.50.2 13.30.3 1.00.2 s Features Unit A A V V V 1.0 1.5 V V 1 Power Transistors PC -- Ta 12 Without heat sink 600 Ta=25C 500 2SC5223 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 1 TC=100C 0.3 25C 0.1 -25C 0.03 0.01 0.003 0.001 0.001 0.003 VCE(sat) -- IC Collector power dissipation PC (W) 10 Collector current IC (A) IB=6mA 400 5mA 4mA 3mA 2mA 1mA 8 6 300 4 200 2 100 0 0 40 80 120 160 200 0 0 1 2 3 4 5 6 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 600 hFE -- IC 120 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz Ta=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.001 0.003 TC=-25C 25C Forward current transfer ratio hFE 500 100 400 TC=100C 300 25C 200 -25C 100 80 60 100C 40 20 0.01 0.03 0.1 0.3 1 0 0.001 0.003 0 0.01 0.03 0.1 0.3 1 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 |
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